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november 2012 ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 1 FR015L3EZ ? low side reverse bias / reverse polarity protector FR015L3EZ (15m ? , -20v) low-side reverse bias / reverse polarity protector features ? up to -20v reverse-bias protection ? nano seconds of reverse-bias blocking response time ? +12v 24-hour ?withstand? rating ? 15m ? typical series resistance at 3.0v ? 18m ? typical series resistance at 2.1v ? integrated tvs over voltage suppression ? micorfet2x2mm package size ? rohs compliant ? usb v bus compatible applications ? 3v+ battery operated systems ? reverse battery protection ? 2 to 5 cell alkaline battery operated systems ? usb 1.0, 2.0 and 3.0 devices ? usb charging ? mobile devices ? mobile medical ? toys ? any dc barrel jack powered device ? any dc devices subject to negative hot plug or inductive transients description reverse bias is an increasingly common fault event that may be generated by user error, improperly installed batteries, automotive environments, erroneous connections to third-party ch argers, negative ?hot plug? transients, inductive transie nts, and readily available negatively biased rouge usb chargers. fairchild circuit protection is proud to offer a new type of reverse bias protection devices. the fr devices are low resistance, series switches that, in the event of a reverse bias condition, shut off power and block the negative voltage to help protect downstream circuits. the fr devices are optimized for the application to offer best in class reverse bias protection and voltage capabilities while minimizing size, series voltage drop, and normal operating power consumption. in the event of a reverse bias application, FR015L3EZ devices effectively provide a full voltage block and can easily protect -0.3v rated silicon. from a power perspective, in normal bias, a 15m ? fr device in a 0.1a application will generate only 1.5mv of voltage drop or 0.15mw of power loss. in reverse bias, fr devices dissipate less then 10w in a 3v reverse bias event. this type of performance is not possible with a diode solution. benefits extend beyond the device. due to low power dissipation, not only is the device small, but heat sinking requirements and cost can be minimized as well. ordering information part number operating temperature range top mark package packing method FR015L3EZ -55 c ~ 125 c 019l 6-lead, molded leadless package (mlp), dual, non-jedec, 2mm square, single-tied dap 3000 on tape & reel; 7-inch reel, 12mm tape
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 2 FR015L3EZ ? low side reverse bias / reverse polarity protector diagrams power switch ctl neg p o startup diode inrush reducer ov bypass protection figure 1. block diagram figure 2. typical schematic pin configuration ctl pos neg microfet 2x2 mm pin 1 figure 3. pin assignments pin definitions name pin description pos 4 the ground of the load circuit to be protected. cu rrent flows into this pin during normal bias operation. ctl 3 the control pin of the device. a positive voltage on this pin with regard to neg pin turns the switch on and a negative voltage turns th e switch to a high impedance state. neg 1, 2, 5, 6 the ground of the input power source. current flows out of this pin during normal bias operation.
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 3 FR015L3EZ ? low side reverse bias / reverse polarity protector absolute maximum ratings values are at t a =25 c unless otherwise noted. stresses exceeding the absolute maximum ratings may dam age the device. the device may not function or be operable above the recommended operating conditions and stressi ng the parts to these levels is not recommended. in addition, extended exposure to stresses above the recomm ended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. symbol parameter value unit v+ max_op steady-state normal operating vo ltage between ctl and neg pins (v in = v+ max_op , i in = 1.5a, switch on) +8 v v+ 24 24-hour normal operating voltage withstand capability between ctl and neg pins (v in = v+ 24 , i in = 1.5a, switch on) (1) 12 v- max_op steady-state reverse bias stando ff voltage between ctl and neg pins (v in = v- max_op ) -20 i in input current v in = 3v, continuous (2) (see figure 4) 8 a t j operating junction temperature 150 c p d power dissipation t a = 25c (2) (see figure 4) 2.4 w t a = 25c (2) (see figure 5) 0.9 i diode_cont steady-state diode continuous fo rward current from pos to neg 2 a i diode_pulse pulsed diode forward current from pos to neg (300s pulse) 190 esd electrostatic discharge capability human body model, jesd22-a114 2500 v charged device model, jesd22-c101 2000 system model, iec61000-4-2 pos is shorted to ctl contact 5000 air 7000 no external connection between pos and ctl contact 300 air 3000 notes: 1. the v +24 rating is not a survival guarantee. it is a statistica lly calculated survivability reference point taken on qualification devices, where the predicted failure rate is less than 0.01% at t he specified voltage for 24 hours. it is intended to indicate the device?s ability to withstand transient events that exce ed the recommended operating voltage rating. specification is based on qualification devices tested using accelerated destructive testing at higher voltages, as well as pr oduction pulse testing at the v +24 level. production device field life results may vary. results are also subject to variation based on implem entation, environmental cons iderations, and circuit dynamics. systems should never be designed wi th the intent to normally operate at v +24 levels. contact fairchild semiconductor for additional information. 2. the device power dissipation and thermal resistance (r ) are characterized with device mounted on the following fr4 printed circuit boards, as shown in figure 4 and figure 5 figure 4. 1 square inch of 2-ounce copper figure 5. minimum pads of 2-ounce copper thermal characteristics symbol parameter value unit r ja thermal resistance, junction to ambient (2) (see figure 4) 60 c/w r ja thermal resistance, junction to ambient (2) (see figure 5) 150
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 4 FR015L3EZ ? low side reverse bias / reverse polarity protector electrical characteristics values are at t a = 25c unless otherwise noted. symbol parameter conditions min. typ. max. unit positive bias characteristics r on device resistan ce, switch on v in = +1.7v, i in = 1.5a 22 30 m ? v in = +2.1v, i in = 1.5a 18 25 v in = +3v, i in = 1.5a 15 20 v in = +5v, i in = 1.5a 14 19 v in = +3v, i in = 1.5a, t j = 125c 22 30 v on input voltage, v in , at which voltage at pos, v pos , reaches a certain level at given current i in = 100ma, v pos = 50mv, v neg = 0v 0.7 1.0 1.3 v ? v on / ? t j temperature coefficient of v on -1.7 mv/c i diode_cont continuous diode forward current v ctl = v pos 2 a v f diode forward voltage v ctl = v pos , i diode = 3a, pulse width < 300s 0.65 0.80 0.95 v i bias bias current flowing out of neg pin during normal bias operation v ctl = 8v, v neg = 0v, no load 10 a negative bias characteristics v- max_op reverse bias breakdown voltage i in = -250a, v ctl = v pos =0v -20 v ? v- max_op / ? t j reverse bias breakdown voltage temperature coefficient 16 mv/c i- leakage current from neg to pos in reverse-bias condition v neg = 16v, v ctl = v pos = 0v 1 a t rn time to respond to negative bias condition v neg = 2.7v, v ctl = 0v, c load = 10f, reverse bias startup inrush current = 0.2a 50 ns integrated tvs performance v z breakdown voltage @ i t i t = 1ma 12 13 14.5 v i r leakage current from ctl to pos, neg is open v ctl ? v pos = 8v 2 10 a v ctl ? v pos = -8v -2 -10 i ppm max pulse current from ctl to pos iec61000-4-5 8x20 s pulse, neg is open v ctl > v pos 0.6 a v ctl < v pos 0.4 v c clamping voltage form ctl to pos v ctl > v pos 15.0 v v ctl < v pos 14.3 dynamic characteristics c i input capacitance between ctl and neg v in = 3v, v neg = v pos = 0v, f = 1mhz 900 pf c s switch capacitance between pos and neg 133 c o output capacitance between ctl and pos 967 r c control internal resistance 2 ?
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 5 FR015L3EZ ? low side reverse bias / reverse polarity protector typical characteristics t j = 25c unless otherwise specified. 0 4 8 12 16 20 10 15 20 25 30 35 40 5v 3v 2.1v input voltage, v in = 1.7v r on , switch on-resistance (m ) i in , input current (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v on , minimum input voltage turning on the switch (v) i in , input current (a) figure 6. switch on resistance vs. switch current figure 7. minimum input voltage to turn on switch vs. current at 50mv switch voltage drop 0.5 2.0 3.5 5.0 6.5 8.0 0.0 0.2 0.4 0.6 0.8 1.0 1.5a 0.9a t j = 25 o c r sw , effective switch resistance ( ) v in , input voltage (v) i in = 0.1a -75 -50 -25 0 25 50 75 100 125 150 6 9 12 15 18 21 24 i in = 0.1a 8v r on , switch on-resistance (m ) t j , junction temperature ( o c) v in = 3v figure 8. effective switch resistance r sw vs. input voltage v in figure 9. switch on resistance vs. junction temperature at 0.1a -75 -50 -25 0 25 50 75 100 125 150 6 9 12 15 18 21 24 i in = 1.5a 8v r on , switch on-resistance (m ) t j , junction temperature ( o c) v in = 3v 1e-3 0.01 0.1 1 10 100 1000 0.1 1 10 100 peak package power (w) t, pulse width (s) figure 10. switch on resistance vs. junction temperature at 1.5a figure 11. single-pulse maximum power vs. time
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 6 FR015L3EZ ? low side reverse bias / reverse polarity protector typical characteristics t j = 25c unless otherwise specified. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1e-3 0.01 0.1 1 10 100 -55 o c 25 o c t j = 125 o c i f , startup diode forward current (a) v f , startup diode forward voltage (v) v pos = v ctl = 0v figure 12. startup diode current vs. forward voltage (continued)
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 7 FR015L3EZ ? low side reverse bias / reverse polarity protector application test configurations figure 13. startup test circuit ? normal bias with FR015L3EZ device figure 14. startup test circuit ? re verse bias with FR015L3EZ device
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 8 FR015L3EZ ? low side reverse bias / reverse polarity protector application test configurations figure 15. startup test circuit ? no reverse polarity protection typical application waveforms figure 16. normal bias startup waveform, v in =3v, v 1 =3v, c 1 =5200f, c 2 =c 3 =10f, r 1 =r 2 =33k ? , r 3 =2 ? v in , 2v/div. the input voltage between ctl and neg v out , 2v/div. the output voltage between ctl and pos v d , 1v/div. the startup diode voltage between pos and neg i in , 5a/div. the input current flowing out of neg time: 2 s/div
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 9 FR015L3EZ ? low side reverse bias / reverse polarity protector typical application waveforms (continued) figure 17. reverse bias startup waveform, v in =3v, v 1 =3v, c 1 =5200f, c 2 =c 3 =10f, r 1 =r 2 =33k ? , r 3 =2 ? figure 18. startup waveform without FR015L3EZ device, v in =3v, v 1 =3v, c 1 =5200f, c 2 =c 3 =10f, r 1 =r 2 =33k ? , r 3 =2 ? v in , 1v/div. the voltage applied on the load circuit i in , 10a/div. the input current v in , 5v/div. the input voltage between ctl and neg v d , 5v/div. the startup diode voltage between pos and neg v out , 0.5v/div. the output voltage between ctl and pos time: 100ns/div time: 2 s/div
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 10 FR015L3EZ ? low side reverse bias / reverse polarity protector application information the FR015L3EZ is capable of being turned on at a voltage as low as 1.5v, ther efore is especially suitable for low voltage application like aa, aaa or single lithium-ion battery operated devices. the voltage and current waveforms in figure 16 and figure 18 are both captured with a 2 ? load at 3v input. when the dc power source is connected to the circuit (refer to figure 1 and figure 2) , the built-in startup diode initially conducts the current such that the load circuit powers up. due to the initial diode voltage drop, the FR015L3EZ effectively reduces the peak inrush current of a hot plug event. under t hese test conditions, the input inrush current reaches about 19a peak. while the current flows, the input volt age increases. the speed of this input voltage increase depends on the time constant formed by the load resistance r 3 and load capacitance c 3 , assuming the input voltage source holds itself during turn on. the larger the time constant, the slower the input voltage increase. as the input voltage approaches a level equal to the protector?s turn-on voltage, v on , the protector turns on and operates in low-resistance mode as defined by v in and operating current i in . in the event of a negative voltage transient between ctl and neg, or when the dc power source, v in , is reversely connected to the circuit, while no residual voltage presents between ctl and pos, the device blocks the flow of current and holds off the voltage, thereby protecting the load circuit. figure 17 shows the startup waveforms while a passive load circuit is reversely biased. it can be clearly seen that the output voltage is near 0 or at a le vel that is harmless to the load circuit. figure 18 shows the voltage and current waveforms when no reverse bias protection is implemented. in figure 16, while the reverse bias protector is present, the input voltage, v in , and the output voltage, v o , are separated and look different. when this reverse bias protector is removed, v in and v o merge, as shown in figure 18 as v in . this v in is also the voltage applied to the load circuit. it can be seen that, with reverse bias protection, the voltage applied to the load and the current flowing into the load look very much the same as without reverse bias protection. in figure 16, negative volt age spikes are seen on v in and v d before v in starts to rise from 0; and in both figures 16 and 18, negative input current is seen after FR015L3EZ is fully turned on. these phenomena are a combined effect of parasit ic inductance and all the capacitors in the input voltage control circuit enclosed in the broken line as shown in figures 13 to 15. this is not a problem as long as the load circuit doesn?t see a negative voltage at anytime, which is what the reverse bias protector is meant for. indeed, we can see from figures 16 and 18, the output voltage on the load circuit is always equal to or greater than 0v. benefits of reverse bias protection the most important benefit is, of course, to prevent accidently reverse-biased voltage from damaging the load circuit. another benefit is that the peak startup inrush current can be reduced. how fast the input voltage rises, the input/out put capacitance, the input voltage, and how heavy the load is determine how much the inrush current can be reduc ed. in this specific 3v / 2a application, for example, the inrush current has been reduced from 24a to 19a, a 21% reduction. this can offer a system designer the option of increasing c 3 while keeping ?effective? load circuit capacitance down.
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 11 FR015L3EZ ? low side reverse bias / reverse polarity protector physical dimensions b. dimensions are in millimeters. c. dimensions and tolerances per a. does not fully conform to jedec registration asme y14.5m, 1994 0.10 cab 0.05 c top view bottom view recommended land pattern opt 1 0.10 c 0.08 c b a c 2.00 2.00 0.05 0.00 0.10 c 2x 2x 0.8 max side view seating plane 0.10 c (0.20) 0.33 0.20 1 3 4 6 4 6 3 1 pin #1 ident 0.65 1.30 1.35 1.05 0.40 typ 0.65 typ 0.35 0.25 2.30 1.00 mo-229 dated aug/2003 0.61 0.51 0.30 0.66 recommended land pattern opt 2 4 6 3 1 1.35 (0.475) 1.05 0.40 typ 0.65 typ 2.30 1.00 no traces allowed in this area pin #1 location 1.05 0.95 d. drawing filename: mkt-mlp06lrev3. 0.50 0.15 0.50 0.20 0.45 (0.20) 1.00 0.80 6x 6x figure 19. 6-lead, molded leadless package (mlp), dual, non-jedec, 2mm square, single-tied dap package drawings are provided as a service to customers consi dering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packagi ng area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . for current tape and reel specifications, visi t fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/products/discrete/pdf/mlp2x2_tr.pdf
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR015L3EZ ? rev. a1 12 FR015L3EZ ? low side reverse bias / reverse polarity protector trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2cool ? accupower ? ax-cap ? * bitsic ? build it now ? coreplus ? corepower ? crossvolt ? ctl ? current transfer logic ? deuxpeed ? dual cool? ecospark ? efficientmax ? esbc ? ? fairchild ? fairchild semiconductor ? fact quiet series ? fact ? fast ? fastvcore ? fetbench ? flashwriter ? * fps ? f-pfs ? frfet ? global power resource sm greenbridge ? green fps ? green fps ? e-series ? g max ? gto ? intellimax ? isoplanar ? making small speakers sound louder and better? megabuck ? microcoupler ? microfet ? micropak ? micropak2 ? millerdrive ? motionmax ? mwsaver ? optohit ? optologic ? optoplanar ? ? powertrench ? powerxs? programmable active droop ? qfet ? qs ? quiet series ? rapidconfigure ? ? saving our world, 1mw/w/kw at a time? signalwise ? smartmax ? smart start ? solutions for your success ? spm ? stealth ? superfet ? supersot ? -3 supersot ? -6 supersot ? -8 supremos ? syncfet ? sync-lock? ? * the power franchise ? tinyboost ? tinybuck ? tinycalc ? tinylogic ? tinyopto ? tinypower ? tinypwm ? tinywire ? transic ? trifault detect ? truecurrent ? * serdes ? uhc ? ultra frfet ? unifet ? vcx ? visualmax ? voltageplus ? xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the appli cation or use of any product or circuit described herein; neither does it convey any license under its patent ri ghts, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwid e terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in the industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard p erformance, failed applications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselves and our cus tomers from the proliferation of counterfeit parts. fair child strongly encourages cust omers to purchase fairchil d parts either directly fr om fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchi ld distributors are genuine parts, have full traceability, meet fairchild's quality standards for handling and storage and provide access to fairchild's full rang e of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and will appropriately address any warr anty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bou ght from unauthorized sources. fairchild is committed to com bat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications fo r product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for refe rence information only. rev. i62

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